advance specification data sheets describe products that are being considered by infneon for development and market intro - duction. the target performance shown in advance specifcations is not fnal and should not be used for any design activity. please contact infneon about the future availability of these products. advance specifcation all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! advance specifcation 1 of 4 rev. 01, 2015-07-27 GTVA221701FA a d v a n c e s p e c i f i c a t i o n gtva261701fa package h-37265j-2 thermally-enhanced high power rf gan hemt 170 w, 50 v, 1805 C 2170 mhz features ? input matched ? typical pulsed cw performance, 1805 mhz, 48 v, single side - output power at p 3db = 200 w - effciency = 70% - gain = 18 db ? capable of handling 10:1 vswr @48 v, 140 w (cw) output power ? gan hemt technology ? high power density ? high effciency ? rohs-compliant description the GTVA221701FA is a 170-watt (p 3db ) gan high electron mobility transistor (hemt) for use in multi-standard cellular power amplifer applications. it features input matching, high efficiency, and a thermally-enhanced package with earless fange. target rf characteristics single- carrier wcdma specifcations (tested in infneon test fxture) v dd = 48 v, i dq = 300 ma, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 9.9 db @ 0.01% ccdf characteristics conditions symbol min typ max unit linear gain ? 1 = 1805 mhz, p out = 50 w avg g ps 19 db drain effciency h d 38 % adjacent channel power ratio acpr C32 dbc linear gain ? 2 = 2170 mhz, p out = 50 w avg g ps 19 db drain effciency h d 36 % adjacent channel power ratio acpr C28 dbc
advance specifcation GTVA221701FA advance specifcation 2 of 4 rev. 01, 2015-07-27 a d v a n c e s p e c i f c a t i o n dc characteristics (measured on wafer prior to packaging) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = C8 v, i d = 20 ma v (br)dss 150 v gate threshold voltage v ds = 10 v, i d = 20 ma v gs(th) C3.8 C3.0 C2.3 v gate quiescent voltage v ds = 50v, i d = 1.0 a v gs(q) C2.8 v saturated drain current v ds = 6.0 v, v gs = 2.0 v i ds 15 18 a maximum ratings parameter symbol value unit drain-source voltage v dss 125 v gate-source voltage v gs C10 to +2 v operating voltage v dd 0 to +50 v gate current ig 20 ma drain current id 7.5 a junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistance r qjc tbd c/w ordering information type and version order code package description shipping GTVA221701FA v1 r0 tbd h-37265j-2, earless fange tape & reel, 50 pcs GTVA221701FA v1 r2 tbd h-37265j-2, earless fange tape & reel, 250 pcs
advance specifcation advance specifcation 3 of 4 rev. 01, 2015-07-27 GTVA221701FA a d v a n c e s p e c i f c a t i o n find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower package outline specifications package h-37265j-2 c l l c d g 2x 6. 35 [. 250 ] lid 10. 16. 25 [. 400 . 010 ] flange 10 . 16 [. 400 ] 45 x .64 [. 025 ] 2x 2. 59 . 51 [. 102 . 020 ] 10. 16. 25 [. 400 . 010 ] sph 1 . 57 [. 062 ] flange 4x r0 . 63 [r . 025 ] max 1. 02 [. 040 ] s ( 15. 34 [. 604 ]) 3. 61. 38 [. 142 . 015 ] 10 . 16 [. 400 ] h - 37265 j - 2 _02 _po _05 - 29 - 2015 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d C drain; g C gate; s C source. 5. lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch].
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